- May 16, 2019
May 16, 2019 — Microchip Technology announced the production release of a family of SiC power devices that wide-bandgap technology. Complemented by Microchip’s range of microcontrollers (MCUs) and analog solutions, the SiC devices join a growing family of SiC products that meet the needs of Electric Vehicles (EVs) and other high-power applications in fast-growing markets.
Microchip’s 700 V SiC MOSFETs and 700 V and 1200 V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC power modules. Microchip now offers a family of SiC die, discretes and power modules across a range of voltage, current ratings and package types.
Microchip’s SiC MOSFETs and SBDs offer switching at higher frequencies. The company’s SiC SBDs perform approximately 20 percent better than other SiC diodes in these Unclamped Inductive Switching (UIS) ruggedness tests that measure how well devices withstand degradation or premature failure under avalanche conditions, which occur when a voltage spike exceeds the device’s breakdown voltage.
The company’s products are suited for the growing number of EV systems including external charging stations, onboard chargers, DC-DC converters and powertrain/traction control solutions.