Northrup Grumman announces APN series of power amplifiers | Automation.com

Northrup Grumman announces APN series of power amplifiers

Northrup Grumman announces APN series of power amplifiers

June 27, 2017 – Northrop Grumman Corporation business, Microelectronics Products and Services (MPS), announced the availability of four new gallium nitride (GaN) power amplifiers, an upgraded amplifier, and two low noise amplifiers. MPS made the announcement last week at the International Microwave Symposium (IMS) 2017.  The new GaN amplifiers are:

An upgraded amplifier:

  • APN 279 - a balanced h amplifier that offers 17dB of linear gain and a saturated output power of 42.5dBm with PAE > 30 percent. APN 279 offers high power output for the 16-21GHz frequency band for applications including next generation satellite communications terminals, point–to-point and point-to-multipoint digital radios.
  • APN 293 - a single staged GaN amplifier that offers 10dB of linear gain and the saturated output power of 39dBm with PAE > 40 percent. APN 293 offers power output for the 16-21GHz frequency band for applications including next generation satellite communications terminals, point–to-point and point-to-multipoint digital radios.
  • APN 298 –a balanced high power amplifier that offers 20dB of linear gain and a saturated output power of 40.5dBm with PAE > 27 percent. APN 298 has output power over the 47.2-51.4 GHz frequency band for Q-band gateway satellite communications terminal applications.
  • APN 299 - a single ended version of the APN243 that also offers 20dB of linear gain and saturated output power of 38dBm with PAE > 31percent. APN 299 has output power over the 47.2-51.4 GHz frequency band for Q-band gateway satellite communications terminal applications.
  • APN294 - a balanced one-stage GaN power amplifier that offers 13dB of linear gain, saturated output power of 42dBm, power added efficiency (PAE) >35 percent and linearity at 1 dB back-off from saturation. It operates between 9 to 13.2 GHz and has direct applications in terrestrial, airborne and satellite communication systems.


Low noise amplifiers:

  • ALP291 – an E-Band indium phosphide (InP) HEMT low noise amplifier that is a 4-stage, broadband, ultra-low noise amplifier Monolithic Microwave Integrated Circuit (MMIC). It can be used in commercial E-Band applications including digital microwave links, radios, wireless LANs, automotive radar, sensors and test equipment. ALP291 is a high power amplifier that offers 26dB of linear gain and works in the radio frequency of 71-86 GHz.
  • ALP292 – a W-Band InP HEMT low noise amplifier that is a 5-stage, broadband, low noise amplifier MMIC. It can be used for W-Band commercial digital microwave links, radios, wireless LANs, radar, sensors and test equipment. ALP292 is a high power amplifier that offers 28dB of linear gain and works in the radio frequency of 92-112 GHz.

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