Aug. 24, 2021 - Easing the transition to high-efficiency wide-bandgap technology, STMicroelectronics has released the MasterGaN3* and MasterGaN5 integrated power packages for applications up to 45W and 150W, respectively. Joining the MasterGaN1 , MasterGaN2 and MasterGaN4 , which target applications from 65W to 400W, the additions give extra flexibility to choose the optimum Gallium Nitride (GaN) device and driver solution when designing switched-mode power supplies, chargers, adapters, high-voltage Power-Factor Correction (PFC), and DC/DC converters . ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology.
The devices integrate two 650V power transistors with optimized high-voltage gate drivers and associated safety and protection circuitry, eliminating gate-driver and circuit-layout design challenges. Combined with the higher switching frequencies possible with GaN transistors, these integrated devices enable power supplies that are up to 80% smaller than silicon-based designs as well as extremely robust and reliable. The GaN power transistors of MasterGaN3 devices have asymmetrical on-resistance (Rds(on)) of 225mΩ and 450mΩ, making these devices suited to soft-switching and active-rectification converters. In MasterGaN5 both transistors have 450mΩ Rds(on) for use in topologies such as LLC-resonant and Active Clamp Flyback.
In common with other MasterGaN family members, both devices have inputs compatible with logic signals from 3.3V to 15V, which simplifies connection of a host DSP, FPGA, or microcontroller, and external devices such as Hall sensors. They also integrate protection including low-side and high-side undervoltage lockout (UVLO), gate-driver interlocks, over-temperature protection, and a shutdown pin. Each MasterGaN device is supported with a dedicated prototype board to help designers jump-start new power-supply projects. The EVALMASTERGAN3 and EVALMASTERGAN5 boards contain circuitry to generate single-ended or complementary driving signals.
There is an adjustable dead-time generator, as well as connections for the user to apply a separate input signal or PWM signal, add an external bootstrap diode to help with capacitive loads, and insert a low-side shunt resistor for peak-current-mode topologies. Housed in a 9mm x 9mm GQFN package optimized for high-voltage applications with 2mm creepage distance between high-voltage and low-voltage pads, MasterGaN3 and MasterGaN5 are in production now. *MasterGaN is a registered or unregistered trademark of STMicroelectronics International NV or its affiliates in the EU and/or elsewhere
