June 22, 2016 - TT Electronics, a global provider of engineered electronics for performance critical applications, launched a Silicon Carbide (SiC) power MOSFET that is designed for high temperature, power efficiency applications with a maximum junction temperature of +225°C. As a result of this operating potential, the package has a higher ambient temperature capability and can therefore be used in applications, including distribution control systems with greater environmental challenges, such as those in close proximity to a combustion engine.
Supplied in a high power dissipation, low thermal resistance, hermetic, ceramic SMD1 package, the 25A, 650V rated SML25SCM650N2B is designed to ensure faster switching and low switching losses in comparison to normal Si type MOSFETs. Consequently, the size of the passive components in the circuit can be reduced, resulting in weight and space saving benefits. The N-channel MOSFET features a total power dissipation of 90W at a TJ temperature of 25 degrees. A range of screening options are available.
For use in applications that require faster switching in high temperature power conversion topologies and systems, the SML25SCM650N2B will find favor with design engineers working in industrial power conversion applications including oil drilling, distributed management control systems, renewable energy applications / power conversion, space systems and applications.
